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IXTP44N10T
IXTY44N10T
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-220 (IXTP) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
V DS = 10 V; I D = 0.5 I D25 , Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
Resistive Switching Times
V GS = 10 V, V DS = 0.5 V DSS , I D = 10 A
R G = 18 ? (External)
13
21
1262
190
43
21
47
36
S
pF
pF
pF
ns
ns
ns
t f
Q g(on)
Q gs
V GS = 10 V, V DS = 0.5 V DSS , I D = 10 A
32
33
10
ns
nC
nC
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
Q gd
R thJC
11
nC
1.15 ° C/W
R thCS
TO-220
0.5
° C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
T J = 25 ° C unless otherwise specified)
Min.
Typ.
Max.
I S
I SM
V GS = 0 V
Repetitive
44
140
A
A
V SD
t rr
I F = 25 A, V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
100
1.1
V
ns
Notes:
1. Pulse test: t ≤ 300 μ s, duty cycle
d ≤ 2 %;
V R = 50 V, V GS = 0 V
2. On through-hole packages, R DS(on)
Kelvin test contact location must be
5 mm or less from the package body.
TO-252 (IXTY) Outline
Dim.
Millimeter
Inches
A
A1
Min. Max.
2.19 2.38
0.89 1.14
Min. Max.
0.086 0.094
0.035 0.045
PRELIMINARY TECHNICAL
INFORMATION
A2
b
0 0.13
0.64 0.89
0
0.025
0.005
0.035
1 Anode
2 NC
3 Anode
4 Cathode
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
4.32 5.21
6.35 6.73
4.32 5.21
2.28 BSC
4.57 BSC
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.090
0.180
0.370
0.020
0.025
0.035
0.100
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
BSC
BSC
0.410
0.040
0.040
0.050
0.115
The product presented herein is under
development. The Technical Specifica-
tions offered are derived from data
gathered during objective characteriza-
tions of preliminary engineering lots; but
also may yet contain some information
supplied during a pre-production design
evaluation. IXYS reserves the right to
change limits, test conditions, and
dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6771478 B2
7,063,975 B2
7,071,537
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